1. Crystallography and Material Principles of Silicon Carbide
1.1 Polymorphism and Atomic Bonding in SiC
(Silicon Carbide Ceramic Plates)
Silicon carbide (SiC) is a covalent ceramic substance made up of silicon and carbon atoms in a 1:1 stoichiometric proportion, identified by its exceptional polymorphism– over 250 recognized polytypes– all sharing solid directional covalent bonds but differing in stacking series of Si-C bilayers.
The most technically relevant polytypes are 3C-SiC (cubic zinc blende framework), and the hexagonal types 4H-SiC and 6H-SiC, each exhibiting subtle variants in bandgap, electron mobility, and thermal conductivity that influence their suitability for details applications.
The strength of the Si– C bond, with a bond power of about 318 kJ/mol, underpins SiC’s remarkable solidity (Mohs firmness of 9– 9.5), high melting factor (~ 2700 ° C), and resistance to chemical destruction and thermal shock.
In ceramic plates, the polytype is commonly selected based upon the planned use: 6H-SiC is common in structural applications as a result of its convenience of synthesis, while 4H-SiC controls in high-power electronics for its exceptional fee carrier movement.
The broad bandgap (2.9– 3.3 eV relying on polytype) likewise makes SiC an outstanding electric insulator in its pure type, though it can be doped to operate as a semiconductor in specialized electronic tools.
1.2 Microstructure and Phase Pureness in Ceramic Plates
The performance of silicon carbide ceramic plates is critically dependent on microstructural functions such as grain size, thickness, phase homogeneity, and the visibility of second stages or pollutants.
Top notch plates are normally produced from submicron or nanoscale SiC powders through sophisticated sintering techniques, resulting in fine-grained, totally thick microstructures that make best use of mechanical toughness and thermal conductivity.
Contaminations such as free carbon, silica (SiO TWO), or sintering aids like boron or aluminum should be carefully managed, as they can form intergranular movies that minimize high-temperature stamina and oxidation resistance.
Residual porosity, even at low levels (
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